STB8N65M5 Datasheet, PDF (5/25 Pages) STMicroelectronics – N-channel 650 V, 0.56 Ω, 7 A MDmesh™ V Power MOSFET

STB/D/F/I/P/U8N65M5
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
t_d(off)
t_r(V)
t_c(off)
t_f(i)
Turn-off delay time
Rise time
Cross time
Fall time
Test conditions
V_DD = 400 V, I_D = 4A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 20)
(see Figure 23)
Min. Typ. Max. Unit
50
ns
14
ns
-
-
20
ns
11
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 7 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 7 A, di/dt = 100 A/µs
V_DD = 100 V
(see Figure 20)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 7 A, di/dt = 100 A/µs
V_DD = 100 V, T_j = 150 °C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
7A
-
28 A
-
1.5 V
200
ns
- 1.6
µC
16
A
263
ns
- 1.9
µC
15
A
Doc ID 16531 Rev 3
5/25