STB8N65M5 Datasheet, PDF (7/25 Pages) STMicroelectronics – N-channel 650 V, 0.56 Ω, 7 A MDmesh™ V Power MOSFET

STB/D/F/I/P/U8N65M5
Electrical characteristics
Figure 8.
ID (A)
12
10
8
Output characteristics
Figure 9.
VGS=10V
AM08197v1
7.5V
ID(A)
12
7V
10
6.5V
8
Transfer characteristics
VDS=20V
AM08198v1
6
6
6V
4
4
2
5.5V
0
5V
0
5
10
15
VDS(V)
2
0
3 4 5 6 7 8 9 VGS(V)
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
VGS
(V)
12
VDS
10
8
6
4
2
VDD=520V
ID=3.5A
AM03195v1
VGS
500
400
300
200
100
RDS(on)
(Ohm)
0.58
0.56
0.54
0.52
VGS=10V
AM08200v1
0
0
0
5
10
15 Qg(nC)
0.50
0
2
4
6
ID(A)
Figure 12. Capacitance variations
C
(pF)
1000
100
10
Figure 13. Output capacitance stored energy
AM08202v1
Eoss
(µJ)
3.5
AM08201v1
Ciss
3.0
2.5
2.0
1.5
Coss
1.0
1
0.1
1
Crss
10
100 VDS(V)
0.5
0
0 100 200 300 400 500 600 VDS(V)
Doc ID 16531 Rev 3
7/25