STB8N65M5 Datasheet, PDF (3/25 Pages) STMicroelectronics – N-channel 650 V, 0.56 Ω, 7 A MDmesh™ V Power MOSFET

STB/D/F/I/P/U8N65M5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
TO-220,
D²PAK
I²PAK
IPAK
DPAK,
TO-220FP
Unit
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
I_AR
E_AS
dv/dt ⁽³⁾
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Max current during repetitive or single pulse
avalanche (pulse width limited by T_JMAX)
Single pulse avalanche energy
(starting T_j = 25°C, I_D = I_AR, V_DD = 50V)
Peak diode recovery voltage slope
± 25
7
4.4
28
70
2
120
15
V
7 ⁽¹⁾
A
4.4 ⁽¹⁾
A
28 ⁽¹⁾
A
25
W
A
mJ
V/ns
V_ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
T_stg Storage temperature
T_j Max. operating junction temperature
1. Limited only by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. I_SD ≤ 7A, di/dt ≤ 400 A/µs, V_Peak < V_(BR)DSS.
2500
V
-55 to 150
°C
150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
DPAK IPAK TO-220 I²PAK D²PAK TO-220FP
R_thj-case
Thermal resistance
junction-case max
1.79
R_thj-amb
Thermal resistance
junction-ambient max
100
62.5
R_thj-pcb(1)
Thermal resistance
junction-pcb max
50
Maximum lead
T_l temperature for soldering
300
purpose
5
°C/W
62.5 °C/W
30
°C/W
300
°C
1. When mounted on 1 inch² FR-4 board, 2oz Cu.
Doc ID 16531 Rev 3
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