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| STB8N65M5 Datasheet, PDF (1/25 Pages) STMicroelectronics – N-channel 650 V, 0.56 Ω, 7 A MDmesh™ V Power MOSFET | |||
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STB8N65M5, STD8N65M5, STF8N65M5
STI8N65M5, STP8N65M5, STU8N65M5
N-channel 650 V, 0.56 Ω, 7 A MDmesh⢠V Power MOSFET
in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK
Features
Type
STB8N65M5
STD8N65M5
STF8N65M5
STI8N65M5
STP8N65M5
STU8N65M5
VDSS @ TJmax RDS(on) max. ID
710 V
< 0.6 Ω 7 A
â Worldwide best RDS(on) * area
â Higher VDSS rating
â High dv/dt capability
â Excellent switching performance
â Easy to drive
â 100% avalanche tested
3
2
1
TO-220FP
3
1
DPAK
3
2
1
TO-220
123
I²PAK
3
1
D²PAK
3
2
1
IPAK
Figure 1. Internal schematic diagram
Applications
$
â Switching applications
Description
'
These devices are N-channel MDmesh⢠V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronicsâ well-known
PowerMESH⢠horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order codes
Marking
Package
STB8N65M5
STD8N65M5
STF8N65M5
STI8N65M5
STP8N65M5
STU8N65M5
8N65M5
D²PAK
DPAK
TO-220FP
I²PAK
TO-220
IPAK
July 2011
Doc ID 16531 Rev 3
3
!-V
Packaging
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