STB6N62K3 Datasheet, PDF (8/19 Pages) STMicroelectronics – Very low intrinsic capacitance

Electrical characteristics
STB6N62K3, STD6N62K3
Figure 14. Normalized B_VDSS vs temperature Figure 15. Source-drain diode forward
characteristics
BVDSS
(norm)
1.10
1.05
ID=1mA
AM09060v1
VSD
(V)
1.0
0.8
AM09063v1
TJ=-50°C
TJ=25°C
0.6
1.00
TJ=150°C
0.4
0.95
0.2
0.90
-75 -25
25
75
125 TJ(°C)
Figure 16. Maximum avalanche energy vs
temperature
EAS(mJ)
160
140
120
AM09064v1
ID=5.5 A
VDD=50 V
100
80
60
40
20
0
0 20 40 60 80 100 120 140 TJ(°C)
0
0 1 2 3 4 5 6 ISD(A)
8/19
Doc ID 022605 Rev 1