STB6N62K3 Datasheet, PDF (5/19 Pages) STMicroelectronics – Very low intrinsic capacitance

STB6N62K3, STD6N62K3
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
V_DD = 310 V, I_D = 2.75 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 17)
Min.
-
Typ.
22
12
49
20
Max. Unit
ns
ns
-
ns
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 5.5 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 5.5 A, di/dt = 100 A/µs
V_DD = 60 V (see Figure 22)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 5.5 A, di/dt = 100 A/µs
V_DD = 60 V, T_j = 150 °C
(see Figure 22)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
5.5 A
-
27 A
-
1.5 V
290
ns
- 1900
nC
13.5
A
335
ns
- 2400
nC
14.5
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
V_(BR)GSO
Gate-source breakdown
voltage (I_D = 0)
Igs=± 1 mA
Min. Typ. Max. Unit
30
-
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 022605 Rev 1
5/19