STB6N62K3 Datasheet, PDF (7/19 Pages) STMicroelectronics – Very low intrinsic capacitance

STB6N62K3, STD6N62K3
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on resistance
VGS
(V)
12
VDD=496V
ID=5.5A
VDS
10
8
6
4
AM09057v1
VDS(V)
500
400
300
200
RDS(on)
(Ω)
1.15
1.10
1.05
1.00
0.95
VGS=10V
AM09056v1
2
100
0.90
0
0
0
10
20
30 Qg(nC)
0.85
0 1 ^{2 3} 4 5 6 ID(A)
Figure 10. Capacitance variations
C
(pF)
1000
Figure 11. Output capacitance stored energy
AM09058v1
Eoss
(µJ)
AM09059v1
5
Ciss
4
100
3
Coss
2
10
Crss
1
1
0.1
1
10
100 VDS(V)
0
0 100 200 300 400 500 VDS(V)
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.10
ID=50µA
AM09061v1
RDS(on)
(norm)
2.5
ID=2.8A
VGS=10A
AM09062v1
1.00
2.0
0.90
0.80
0.70
-75 -25
25
75
125 TJ(°C)
1.5
1.0
0.5
0.0
-75 -25
25
75 125 TJ(°C)
Doc ID 022605 Rev 1
7/19