STB6N62K3 Datasheet, PDF (3/19 Pages) STMicroelectronics – Very low intrinsic capacitance

STB6N62K3, STD6N62K3
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
I_AR ⁽²⁾
E_AS ⁽³⁾
ESD
dv/dt ⁽⁴⁾
Drain-source voltage
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Avalanche current, repetitive or not-repetitive
Single pulse avalanche energy
Gate-source human body model
(R=1.5 kΩ, C=100 pF)
Peak diode recovery voltage slope
T_stg Storage temperature
T_j Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. Pulse width limited by Tj max.
3. Starting Tj = 25 °C, I_D = I_AR, V_DD = 50 V.
4. I_SD ≤ 5.5 A, di/dt ≤ 400 A/µs, V_DD = 80% V_(BR)DSS.
Table 3. Thermal data
Symbol
Parameter
R_thj-case Thermal resistance junction-case max.
R_thj-pcb(1) Thermal resistance junction-pcb max.
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
Electrical ratings
Value
D²PAK
620
± 30
5.5
3
22
90
5.5
140
DPAK
2.5
12
-55 to 150
150
Unit
V
V
A
A
A
W
A
mJ
kV
V/ns
°C
°C
D²PAK
1.39
30
DPAK
50
Unit
°C/W
°C/W
Doc ID 022605 Rev 1
3/19