STB6N62K3 Datasheet, PDF (1/19 Pages) STMicroelectronics – Very low intrinsic capacitance

STB6N62K3
STD6N62K3
N-channel 620 V, 0.95 Ω, 5.5 A SuperMESH3™ Power MOSFET
in D²PAK, DPAK
Features
Order codes
STB6N62K3
STD6N62K3
V_DSS
620 V
R_DS(on)
max.
< 1.2 Ω
I_D
Pw
5.5 A 90 W
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Applications
■ Switching applications
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
Table 1. Device summary
Order codes
STB6N62K3
STD6N62K3
Marking
6N62K3
TAB
3
1
D²PAK
TAB
3
1
DPAK
Figure 1. Internal schematic diagram
D(2,TAB)
G(1)
S(3)
AM01476v1
Package
D²PAK
DPAK
Packaging
Tape and reel
December 2011
Doc ID 022605 Rev 1
1/19
www.st.com
19