STB13NM60N Datasheet, PDF (8/24 Pages) STMicroelectronics – Low gate input resistance

Electrical characteristics
Figure 14. Source-drain diode forward
characteristics
VSD
(V)
TJ=-50°C
AM09290v1
1.2
TJ=25°C
1.0
0.8
TJ=150°C
0.6
0.4
0
2
4
6
8 10 ISD(A)
STB13NM60N, STD13NM60N
8/24
DocID024095 Rev 3