STB13NM60N Datasheet, PDF (4/24 Pages) STMicroelectronics – Low gate input resistance

Electrical characteristics
2
Electrical characteristics
STB13NM60N, STD13NM60N
(T_CASE = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On/off states
Test conditions
Drain-source
V_{(BR)DSS breakdown voltage}
Zero gate voltage
I_{DSS drain current}
I_GSS
Gate-body leakage
current
V_GS(th)
R_DS(on)
Gate threshold voltage
Static drain-source
on-resistance
V_GS = 0, I_D = 1 mA
V_GS = 0, V_DS = 600 V
V_GS = 0, V_DS = 600 V,
T_C=125 °C
V_DS = 0, V_GS = ± 25 V
V_DS = V_GS, I_D = 250 µA
V_GS = 10 V, I_D = 5.5 A
Min. Typ. Max. Unit
600
V
1 µA
100 µA
± 0.1 µA
23
4V
0.28 0.36 Ω
4/24
Symbol
Parameter
Table 6. Dynamic
Test conditions
Min. Typ. Max. Unit
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_GS = 0, V_DS = 50 V,
f = 1 MHz
- 790 - pF
- 60 - pF
- 3.6 - pF
C_{oss eq.} ⁽¹⁾
Equivalent output
capacitance
V_GS = 0, V_DS = 0 to 480 V
- 135 - pF
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
R_G Gate input resistance
V_DD = 480 V, I_D = 11 A,
V_GS = 10 V,
(see Figure 16)
f=1 MHz open drain
- 27 - nC
-
4
- nC
- 14 - nC
- 4.7 - Ω
1. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DS
Symbol
Table 7. Switching times
Parameter
Test conditions
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_DD = 300 V, I_D = 5.5 A
R_G = 4.7 Ω V_GS = 10 V
(see Figure 15)
Min. Typ. Max. Unit
-
3
- ns
-
8
- ns
- 30 - ns
- 10 - ns
DocID024095 Rev 3