STB13NM60N Datasheet, PDF (7/24 Pages) STMicroelectronics – Low gate input resistance

STB13NM60N, STD13NM60N
Electrical characteristics
Figure 8. Normalized V_(BR)DSS vs temperature
V(BR)DSS
(norm)
1.10
ID=1mA
AM09028v1
1.08
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
-50 -25 0 25 50 75 100 TJ(°C)
Figure 10. Gate charge vs gate-source voltage
VGS
(V)
VDD=480V
12
VDS
ID=11A
10
8
6
4
AM03305v1
VDS(V)
500
400
300
200
2
100
0
0
0
10
20
30 Qg(nC)
Figure 12. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
1.10
ID=250µA
AM03306v1
1.00
0.90
0.80
0.70
-50 -25 0 25 50 75 100 TJ(°C)
Figure 9. Static drain-source on-resistance
RDS(on)
(Ω)
AM03302v1
0.30
VGS=10V
0.28
0.26
0.24
0.22
0.2
0
24
6
8 10 ID(A)
Figure 11. Capacitance variations
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Figure 13. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.1
1.9
ID=5.5A
VGS=10V
AM03307v1
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0
25 50 75 100 TJ(°C)
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