STB13NM60N Datasheet, PDF (5/24 Pages) STMicroelectronics – Low gate input resistance

STB13NM60N, STD13NM60N
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max. Unit
I_SD Source-drain current
-
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
V_SD ⁽²⁾ Forward on voltage
I_SD = 11 A, V_GS = 0
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 11 A, di/dt = 100 A/µs ^-
V_DD = 100 V
-
(see Figure 17)
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 11 A, di/dt = 100 A/µs ^-
V_DD = 100 V, T_j = 150 °C
-
(see Figure 17)
-
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
11 A
44 A
1.5 V
230
ns
2
µC
18
A
290
ns
2.5
µC
17
A
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