STB13NM60N Datasheet, PDF (1/24 Pages) STMicroelectronics – Low gate input resistance

STB13NM60N,
STD13NM60N
N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II
Power MOSFETs in D²PAK and DPAK packages
Datasheet — production data
Features
TAB
3
1
D²PAK
TAB
3
1
DPAK
Order code V_DS (@Tjmax) R_DS(on) max
STB13NM60N
STD13NM60N
650 V
0.36 Ω
I_D
11 A
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Figure 1. Internal schematic diagram
'RU7$%
*
6
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
6&
Order code
STB13NM60N
STD13NM60N
Table 1. Device summary
Marking
Packages
13NM60N
D²PAK
DPAK
Packaging
Tape and reel
June 2015
This is information on a product in full production.
DocID024095 Rev 3
1/24
www.st.com