STB13NM60N Datasheet, PDF (3/24 Pages) STMicroelectronics – Low gate input resistance

STB13NM60N, STD13NM60N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
V_DS
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
dv/dt ⁽²⁾
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
600
± 25
11
6.93
44
90
15
T_stg Storage temperature
- 55 to 150
T_j Max. operating junction temperature
150
1. Pulse width limited by safe operating area
2. I_SD ≤ 11 A, di/dt ≤ 400 A/µs, V_{DS peak} ≤ V_(BR)DSS, V_DD = 80% V_(BR)DSS.
Table 3. Thermal data
Symbol
Parameter
Value
D²PAK
DPAK
R_thj-case Thermal resistance junction-case max
R_thj-pcb Thermal resistance junction-pcb max
1.39
30
50
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Avalanche current, repetitive or not-repetitive
I_{AS (pulse width limited by Tj max)}
3.5
Single pulse avalanche energy
E_{AS (starting TJ=25 °C, ID=IAS, VDD=50 V)}
200
Unit
V
V
A
A
A
W
V/ns
°C
°C
Unit
°C/W
°C/W
Unit
A
mJ
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