PD57002-E Datasheet, PDF (8/23 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Typical performance
PD57002-E, PD57002S-E
Figure 9. Output power vs drain voltage
Figure 10. Efficiency vs drain voltage
Pout (W)
2.5
2
1.5
1
945 MHz
925 MHz
960 MHz
Nd (%)
60
945 MHz
50
960 MHz
925 MHz
40
30
0.5
Pin = 17.4dBm
Idq = 15mA
0
10 12.5 15 17.5 20 22.5 25 27.5 30
Vdd (V)
20
Pin = 17.4dBm
Idq = 15mA
10
10 12.5 15 17.5 20 22.5 25 27.5 30
Vdd (V)
Figure 11. Output power vs drain current
Figure 12. Efficiency vs drain current
Pout (W)
3
2.5
2
925 MHz
960 MHz
945 MHz
1.5
1
0.5
0
0
Pin = 17.4dBm
Vdd = 28V
25
50
75
100 125 150 175
Idq (mA)
Eff (%)
60
50
40
925 MHz
945 MHz
960 MHz
30
20
10
0
Pin = 17.4dBm
Vdd = 28V
25
50
75
100 125 150 175
Idq (mA)
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