PD57002-E Datasheet, PDF (6/23 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Typical performance
4
Typical performance
PD57002-E, PD57002S-E
Figure 2. Capacitance vs supply voltage
C (pF)
100
Figure 3. Drain current vs
gate source voltage
Id (A)
0.25
10
Ciss
Coss
1
0.1
0
Crss
5
10
15
20
25
30
Vdd (V)
0.2
0.15
0.1
0.05
0
2
2.5
3
3.5
4
4.5
5
5.5
6
Vgs (V)
Figure 4. Gate-source voltage vs
case temperature
Vgs (Normalized)
1.05
1.025
Id = 200 mA
1
0.975
0.95
Id = 150 mA
Id = 100 mA
Id = 50 mA
0.925
0.9
-50 -25
0
Vds = 10V
25
50
Tc (°C)
75
100 125
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