PD57002-E Datasheet, PDF (1/23 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

PD57002-E
PD57002S-E
RF POWER transistor, LDMOST plastic family
N-Channel enhancement-mode lateral MOSFETs
General features
■ Excellent thermal stability
■ Common source configuration
■ P_OUT = 2W with 15dB gain @ 960MHz / 28V
■ New RF plastic package
Description
The PD57002 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1GHz. The PD57002 is designed for high gain
and broadband performance operating in
common source mode at 28 V. It is ideal for digital
cellular BTS applications requiring high linearity.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of
assembly.
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Pin connection
Source
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
Gate
Drain
Order codes
Part number
PD57002-E
PD57002S-E
Package
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
Packing
Tube
Tube
May 2006
Rev 1
1/23
www.st.com
23