PD57002-E Datasheet, PDF (3/23 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

PD57002-E, PD57002S-E
1
Electrical data
1.1
Maximum ratings
Table 1. Absolute maximum ratings (T_CASE = 25°C)
Symbol
Parameter
V_(BR)DSS
V_GS
I_D
P_DISS
T_J
T_STG
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation (@ T_C = 70°C)
Max. operating junction temperature
Storage temperature
1.2
Thermal data
Table 2. Thermal data
Symbol
Parameter
R_thJC
Junction - case thermal resistance
Electrical data
Value
Unit
65
V
± 20
V
0.25
A
4.75
W
165
°C
-65 to +150
°C
Value
20
Unit
°C/W
3/23