PD57002-E Datasheet, PDF (4/23 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Electrical Characteristics
2
Electrical Characteristics
PD57002-E, PD57002S-E
2.1
T_CASE = +25 ^oC
Static
Table 3. Static
Symbol
I_DSS
I_GSS
V_GS(Q)
V_DS(ON)
G_FS
C_ISS
C_OSS
C_RSS
V_GS = 0V
V_GS = 20V
V_DS = 28V
V_GS = 10V
V_DS = 10V
V_GS = 0V
V_GS = 0V
V_GS = 0V
Test conditions
V_DS = 28V
V_DS = 0V
I_D = 10mA
I_D = 125mA
I_D = 200mA
V_DS = 28V
V_DS = 28V
V_DS = 28V
f = 1MHz
f = 1MHz
f = 1MHz
Min Typ Max Unit
1 µA
1 µA
2.0
5.0 V
0.7 0.9 V
--
mho
7.1
pF
5.8
pF
0.1
pF
2.2
Dynamic
Table 4. Dynamic
Symbol
Test conditions
Min Typ Max Unit
P_1dB
G_P
h_D
Load
mismatch
V_DD = 28V, I_DQ = 10mA
V_DD = 28V, I_DQ = 10mA,
V_DD = 28V, I_DQ = 10mA,
V_DD = 28V, I_DQ = 10mA,
All phase angles
P_OUT = 2W,
P_OUT = 2W,
P_OUT = 2W,
f = 960MHz
f = 960MHz
f = 960MHz
f = 960MHz
2
15
45
10:1
W
dB
%
VSWR
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