PD57002-E Datasheet, PDF (7/23 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

PD57002-E, PD57002S-E
Typical performance
Figure 5. Output power vs input power
Figure 6. Input return loss vs output power
Pout (W)
2.5
2
1.5
945 MHz
925 MHz
960 MHz
1
0.5
0
0
Vdd = 28V
Idq = 15mA
0.01 0.02 0.03 0.04 0.05 0.06 0.07
Pin (W)
IRL (dB)
0
-5
-10
-15
960 MHz
-20
945 MHz
-25
-30
0
925 MHz
Vdd = 28V
Idq = 15mA
0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25
Pout (W)
Figure 7. Power gain vs output power
Figure 8. Efficiency vs output power
Pg (dB)
18
17
945 MHz
925 MHz
16
960 MHz
15
14
13
12
11
10
0
Vdd = 28V
Idq = 15mA
0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25
Pout (W)
Eff (%)
55
50
945 MHz
45
925 MHz
40
35
960 MHz
30
25
20
15
0
0.25 0.5 0.75
Vdd = 28V
Idq = 15mA
1 1.25 1.5 1.75 2 2.25
Pout W)
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