STD80N4F6 Datasheet, PDF (7/18 Pages) STMicroelectronics – N-channel 40 V, 5.5 m typ., 80 A STripFET VI DeepGATE Power MOSFET in DPAK

STD80N4F6, STU80N4F6
Electrical characteristics
Figure 8. Capacitance variations
C
(pF)
2500
2000
AM15352v1
Ciss
1500
1000
500
0
0
Coss
Crss
10
20
30
40 VDS(V)
Figure 10. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
AM15354v1
1.2
1
ID=250 µA
0.8
0.6
0.4
0.2
0
-75 -50 -25 0 25 50 75 100 125 TJ(°C)
Figure 12. Normalized B_VDSS vs temperature
VDS
(norm)
AM15353v1
1.3
ID = 1mA
1.2
1.1
1
0.9
0.8
0.7
0.6
-75 -50 -25 0 25 50 75 100125 150 TJ(°C)
Figure 9. Drain-source diode forward
characteristics
VSD
(V)
TJ=-50°C
1.0
AM15604v1
0.8
TJ=150°C
0.6
TJ=25°C
0.4
0.2
0
0
20
40
60
80 ISD(A)
Figure 11. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2
VGS=10V
ID=40A
AM15356v1
1.5
1
0.5
0
-75 -50 -25 0 25 50 75 100 125150 TJ(°C)
DocID023839 Rev 3
7/18