STD80N4F6 Datasheet, PDF (3/18 Pages) STMicroelectronics – N-channel 40 V, 5.5 m typ., 80 A STripFET VI DeepGATE Power MOSFET in DPAK

STD80N4F6, STU80N4F6
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
V_DS
V_GS
I_D(1)
I_D(1)
I_DM ⁽²⁾
P_TOT
I_AV
E_AS
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Avalanche current, repetitive or not-repetitive
(pulse width limited by T_Jmax)
Single pulse avalanche energy
(starting T_j = 25 °C, I_D = I_AV, V_DD = 25 V)
Derating factor
T_stg Storage temperature
T_j Max. operating junction temperature
1. Current limited by package.
2. Pulse width limited by safe operating area
40
± 20
80⁽¹⁾
56⁽¹⁾
320⁽¹⁾
70
40
149
0.47
-55 to 175
Symbol
Table 3. Thermal data
Parameter
Value
DPAK
IPAK
R_thj-case Thermal resistance junction-case max
R_thj-amb Thermal resistance junction-ambient max
R_thj-pcb(1) Thermal resistance junction-ambient max
1. When mounted on FR-4 board of inch², 2 oz Cu
2.14
100
50
Unit
V
V
A
A
A
W
A
mJ
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
DocID023839 Rev 3
3/18