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| STD80N4F6 Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 40 V, 5.5 m typ., 80 A STripFET VI DeepGATE Power MOSFET in DPAK | |||
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STD80N4F6,
STU80N4F6
N-channel 40 V, 5.5 mΩ typ., 80 A STripFET⢠VI DeepGATEâ¢
Power MOSFET in DPAK and IPAK packages
Datasheet â production data
Features
TAB
TAB
3
1
DPAK
3
2
1
IPAK
Figure 1. Internal schematic diagram
$ 4!"
'
Order codes
STD80N4F6
STU80N4F6
VDS
40 V
RDS(on) max ID
6.0 mΩ
6.3 mΩ
80 A
⢠Low gate charge
⢠Very low on-resistance
⢠High avalanche ruggedness
Applications
⢠Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the 6th generation of STripFETâ¢
DeepGATE⢠technology, with a new gate
structure. The resulting Power MOSFETs exhibits
the lowest RDS(on) in all packages.
3
!-V
Order codes
STD80N4F6
STU80N4F6
Table 1. Device summary
Marking
Package
80N4F6
DPAK
IPAK
March 2013
This is information on a product in full production.
DocID023839 Rev 3
Packaging
Tape and reel
Tube
1/18
www.st.com
18
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