STD80N4F6 Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 40 V, 5.5 m typ., 80 A STripFET VI DeepGATE Power MOSFET in DPAK

Electrical characteristics
2
Electrical characteristics
(T_C = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On /off states
Test conditions
V_(BR)DSS
Drain-source
breakdown voltage
I_D = 250 µA, V_GS = 0
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage
V_DS = 40 V
drain current (V_GS = 0) V_DS = 40 V, T_C=125 °C
Gate-body leakage
current (V_DS = 0)
V_GS = ± 20 V
Gate threshold voltage V_DS = V_GS, I_D = 250 µA
Static drain-source
on-resistance
V_GS = 10 V, I_D = 40 A
for DPAK
for IPAK
STD80N4F6, STU80N4F6
Min. Typ. Max. Unit
40
V
1 µA
100 µA
± 100 nA
2
4
V
5.5
6 mΩ
5.8 6.3 mΩ
Symbol
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
V_DS = 25 V, f = 1 MHz,
V_GS = 0
V_DD = 20 V, I_D = 80 A,
V_GS = 10 V
(see Figure 14)
Min.
-
-
Typ.
2150
335
Max. Unit
- pF
- pF
-
160
- pF
-
36
- nC
-
11
- nC
-
9
- nC
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V_DD = 20 V, I_D = 40 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 15)
Min.
-
-
-
-
Typ.
10.5
7.6
46.1
11.9
Max Unit
-
ns
-
ns
-
ns
-
ns
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