STD80N4F6 Datasheet, PDF (6/18 Pages) STMicroelectronics – N-channel 40 V, 5.5 m typ., 80 A STripFET VI DeepGATE Power MOSFET in DPAK

Electrical characteristics
STD80N4F6, STU80N4F6
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
ID
(A)
100
OpLeirm^aittieodn ^{binytmhisaxarReDaS(ison)}
AM15599v1
100µs
Figure 3. Thermal impedance
10
1
0.1
0.1
Tj=175°C
Tc=25°C
Single
pulse
1ms
10ms
1
10
VDS(V)
Figure 4. Output characteristics
ID
AM15600v1
(A)
VG_S= 7, 8, 9, 10 V
200
VG_S= 6 V
150
100
50
0
0
VG_S= 5 V
VG_S= 4 V
2
4
VDS(V)
Figure 6. Gate charge vs gate-source voltage
VGS
(V)
12
VDD=20V
ID=80A
AM15602v1
10
8
6
4
2
0
0
10
20
30 40 Qg(nC)
Figure 5. Transfer characteristics
ID
(A)
VD_S= 2 V
180
AM15601v1
140
120
100
80
60
40
20
0
2 3 4 5 6 7 8 9 10 VGS(V)
Figure 7. Static drain-source on-resistance
RDS(on)
(mΩ)
AM15603v1
6.5
VG_S= 10V
6
IPAK
5.5
DPAK
5
4.5
4
0
20
40
60
80 ID(A)
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DocID023839 Rev 3