STD80N4F6 Datasheet, PDF (5/18 Pages) STMicroelectronics – N-channel 40 V, 5.5 m typ., 80 A STripFET VI DeepGATE Power MOSFET in DPAK

STD80N4F6, STU80N4F6
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
-
80 A
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
320 A
V_SD ⁽²⁾ Forward on voltage
I_SD = 40 A, V_GS = 0
-
1.3 V
t_rr
Reverse recovery time
- 41.1
ns
Q_rr Reverse recovery charge
I_SD = 80 A, di/dt = 100 A/µs
V_DD = 32 V (see Figure 17)
-
43.6
nC
I_RRM Reverse recovery current
- 2.1
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID023839 Rev 3
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