STD3NM60N Datasheet, PDF (7/15 Pages) STMicroelectronics – N-channel 600 V, 1.6 Ω, 3.3 A, MDmesh™ II Power MOSFET in DPAK package

STD3NM60N
Electrical characteristics
Figure 8. Capacitance variations
C
(pF)
1000
100
10
Figure 9. Output capacitance stored energy
AM11298v1
Eoss
(µJ)
AM11299v1
1.6
1.2
Ciss
0.8
Coss
0.4
1
0.1
1
Crss
10
100 VDS(V)
0
0 100 200 300 400 500 VDS(V)
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on-resistance vs.
vs. temperature
temperature
VGS(th)
(norm)
ID=250µA
AM11300v1
RDS(on)
(norm)
ID=1.65A
AM11301v1
1.02
2.0
0.94
1.6
0.86
1.2
0.78
0.8
0.70
-50
0
50
100
TJ(°C)
0.4
-50
0
50
100
TJ(°C)
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized V_DS vs. temperature
VSD
(V)
1.2
1.1
1.0
0.9
TJ=-50°C
AM11303v1
TJ=25°C
TJ=150°C
VDS
(norm)
1.10
1.08
1.06
1.04
1.02
ID=1mA
AM09028v1
0.8
0.7
0.6
0.5
0 0.5 1 1.5 2 2.5 3 ISD(A)
1.00
0.98
0.96
0.94
0.92
-50 -25 0 25 50 75 100 TJ(°C)
Doc ID 023056 Rev 1
7/15