STD3NM60N Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 600 V, 1.6 Ω, 3.3 A, MDmesh™ II Power MOSFET in DPAK package

STD3NM60N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
V_DD = 300 V, I_D = 1.65 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 14)
Min. Typ. Max Unit
6
9.5
-
23
31
ns
ns
-
ns
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max Unit
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 3.3 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 3.3 A, di/dt = 100 A/µs
V_DD= 60 V
(see Figure 16)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 3.3 A, di/dt = 100 A/µs
V_DD= 60 V T_J = 150 °C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
3.3 A
-
13.2 A
-
1.6 V
200
ns
- 910
nC
9.1
A
236
ns
- 1073
nC
9.1
A
Doc ID 023056 Rev 1
5/15