STD3NM60N Datasheet, PDF (6/15 Pages) STMicroelectronics – N-channel 600 V, 1.6 Ω, 3.3 A, MDmesh™ II Power MOSFET in DPAK package

Electrical characteristics
STD3NM60N
2.1 Electrical characteristics (curves)
Figure 2.
ID
(A)
Safe operating area
10
1
OpeLri^a_mtiiotendin^{bythmisaaxreRaDSis(on)}
0.1
Figure 3.
AM11293v1
Tj=150°C
Tc=25°C
Single pulse
Thermal impedance
10µs
100µs
1ms
10ms
0.01
0.1
1
10
100 VDS(V)
Figure 4. Output characteristics
ID
(A)
VGS=10V
5
Figure 5.
AM11294v1
ID
(A)
5
Transfer characteristics
VGS=20V
AM11295v1
4
4
6V
3
3
2
2
1
5V
1
0
0
4
8 12 16 20 VDS(V)
0
0
2
4
6
8
VGS(V)
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance
VGS
(V)
12 VDS
10
8
6
4
2
VDD=480V
ID=3.3A
AM11296v1
VDS
(V)
500
400
300
200
100
RDS(on)
(Ω)
1.66
1.62
1.58
1.54
VGS=10V
AM11297v1
0
0
0
2
4
6
8 10 Qg(nC)
1.50
0 0.5 ^{1 1.5 2 2.5 3} ID(A)
6/15
Doc ID 023056 Rev 1