STD3NM60N Datasheet, PDF (1/15 Pages) STMicroelectronics – N-channel 600 V, 1.6 Ω, 3.3 A, MDmesh™ II Power MOSFET in DPAK package

STD3NM60N
N-channel 600 V, 1.6 Ω, 3.3 A, MDmesh™ II Power MOSFET
in DPAK package
Datasheet — preliminary data
Features
Order codes
STD3NM60N
V_DSS
@T_Jmax
650 V
R_DS(on)
max.
< 1.8 Ω
I_D
3.3 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
TAB
3
1
DPAK
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Figure 1. Internal schematic diagram
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3
!-V
Table 1. Device summary
Order codes
STD3NM60N
Marking
3NM60N
Package
DPAK
Packaging
Tape and reel
May 2012
Doc ID 023056 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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