STD3NM60N Datasheet, PDF (3/15 Pages) STMicroelectronics – N-channel 600 V, 1.6 Ω, 3.3 A, MDmesh™ II Power MOSFET in DPAK package

STD3NM60N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
dv/dt⁽²⁾
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
± 25
3.3
2.5
13
50
15
T_J Operating junction temperature
T_stg Storage temperature
- 55 to 150
1. Pulse width limited by safe operating area.
2. I_SD ≤ 3.3 A, di/dt ≤ 400 A/µs, V_DS peak ≤ V_(BR)DSS, V_DD = 80% V_(BR)DSS.
Table 3. Thermal data
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-pcb Thermal resistance junction-pcb max
Value
2.5
50
Table 4. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
EAS
Single pulse avalanche energy (starting
TJ=25 °C, ID=IAR, VDD=50 V)
Value
1
86
Unit
V
A
A
A
W
V/ns
°C
Unit
°C/W
°C/W
Unit
A
mJ
Doc ID 023056 Rev 1
3/15