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STD3NM60N Datasheet, PDF (4/15 Pages) STMicroelectronics – N-channel 600 V, 1.6 Ω, 3.3 A, MDmesh™ II Power MOSFET in DPAK package
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Electrical characteristics
2
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 600 V
drain current (VGS = 0) VDS = 600 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V; VDS=0
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source
on-resistance
VGS = 10 V, ID = 1.65A
STD3NM60N
Min. Typ. Max. Unit
600
V
1 µA
100 µA
±100 nA
2
3
4
V
1.6 1.8 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
188
pF
-
12.8
-
pF
1.1
pF
Coss(tr)(1)
Output capacitance
time related
VDS = 0, VGS = 0
-
96.8
-
pF
Rg
Gate input resistance f=1 MHz open drain
-
6
-
Ω
Qg
Total gate charge
VDD = 480 V, ID = 3.3A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 15)
9.5
nC
-
2
- nC
5
nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS.
4/15
Doc ID 023056 Rev 1
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