STD10P10F6 Datasheet, PDF (7/15 Pages) STMicroelectronics – High avalanche ruggedness

STD10P10F6
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs
temperature
Figure 10: Normalized on-resistance
RDS(on)
(norm)
GIPG270520141149SA
2.5
VGS=10V
Figure 11: Normalized V(BR)DSS vs temperature
2
1.5
1
0.5
0
-75
-25
25
75
125 TJ(°C)
Figure 12: Source-drain diode forward characteristics
DocID026365 Rev 2
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