STD10P10F6 Datasheet, PDF (6/15 Pages) STMicroelectronics – High avalanche ruggedness

Electrical characteristics
2.1
Electrical characteristics (curves)
STD10P10F6
Figure 2: Safe operating area
ID
GIPG021020141123FSR
(A)
Figure 3: Thermal impedance
GIPG021020141545FSR
K
δ= 0.5
10
Ope_L^r_i^a_m^tii^{otendinbythmisaaxreRa}
is
DS(on)
1
0.1
0.1
1
100µs
1ms
Tj=175°C
Tc=25°C
Single pulse
10
10ms
VDS(V)
0.2
0.1
10 ^-1
0.05
0.02
0.01
SINGLE PULSE
10 ^-2
10 ^-5
10 ^-4
10 ^-3
10 ^-2
tp(s)
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
VGS
GIPG270520141105SA
(V)
VDD=80V
12
ID=10 A
10
8
6
4
2
0
0
5
10
15
20
Qg(nC)
Figure 7: Static drain-source on-resistance
RDS(on)
GIPG270520141110SA
(m Ω)
VGS=10V
135.5
135
134.5
134
133.5
133
1
2
3
4
5 ID(A)
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