|
STD10P10F6 Datasheet, PDF (1/15 Pages) STMicroelectronics – High avalanche ruggedness | |||
|
STD10P10F6
P-channel 100 V, 0.136 ⦠typ., 10 A STripFET⢠F6
Power MOSFET in a DPAK package
Datasheet - production data
Features
Order code
STD10P10F6
VDSS
100 V
RDS(on) max
0.18 Ω
ID
10 A
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
S(3)
AM11258v1
ï· Very low on-resistance
ï· Very low gate charge
ï· High avalanche ruggedness
ï· Low gate drive power loss
Applications
ï· Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET⢠F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Table 1: Device summary
Order code Marking Package Packaging
STD10P10F6 10P10F6 DPAK Tape and reel
For the P-channel Power MOSFET the
actual polarity of the voltages and the
current must be reversed.
October 2014
DocID026365 Rev 2
This is information on a product in full production.
1/15
www.st.com
|
▷ |