STD10P10F6 Datasheet, PDF (3/15 Pages) STMicroelectronics – High avalanche ruggedness

STD10P10F6
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
VDS
VGS
ID
ID
IDM ⁽¹⁾
PTOT
Tstg
Tj
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Storage temperature
Max. operating junction temperature
Notes:
(1)_{Pulse width limited by safe operating area}
Symbol
Rthj-case
Rthj-pcb⁽¹⁾
Table 3: Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Notes:
(1)_{When mounted on 1 inch}2 _{FR-4, 2 Oz copper board}
Electrical ratings
Value
Unit
100
V
± 20
V
10
A
7.5
A
40
A
40
W
-55 to 175
°C
175
°C
Value
3.75
50
Unit
°C/W
°C/W
For the P-channel Power MOSFET the actual polarity of the voltages and the
current must be reversed.
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