STD10P10F6 Datasheet, PDF (4/15 Pages) STMicroelectronics – High avalanche ruggedness

Electrical characteristics
STD10P10F6
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Symbol
Parameter
Table 4: Static
Test conditions
V(BR)DSS
Drain-source breakdown
Voltage
VGS= 0, ID = 250 µA
IDSS
Zero gate voltage drain
current
VGS = 0, VDS = 100 V
VGS = 0, VDS = 100 V, Tc =
125 °C
IGSS
VGS(th)
RDS(on)
Gate body leakage current
Gate threshold voltage
Static drain-source on-
resistance
VDS = 0, VGS = ± 20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5 A
Min. Typ. Max. Unit
100
V
1 µA
10 µA
±100 nA
2
4
V
0.136 0.18 Ω
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
Parameter
Table 5: Dynamic
Test conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 80 V, f=1 MHz,
VGS = 0
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 80 V, ID = 10 A
VGS = 10 V
Min. Typ. Max. Unit
- 864
-
pF
-
45
-
pF
-
25
-
pF
- 16.5 -
nC
-
3.5
-
nC
-
3.8
-
nC
Symbol
td(on)
tr
td(off)
tf
Table 6: Switching on/off (inductive load)
Parameter
Test conditions
Min.
Turn-on delay time
-
Rise time
VDD = 80 V, ID = 5 A,
-
Turn-off delay time
RG = 4.7 Ω, VGS = 10 V
-
Fall time
-
Typ.
10.5
4.8
24
4.5
Max.
-
-
-
-
Unit
ns
ns
ns
ns
For the P-channel Power MOSFET the actual polarity of the voltages and the
current must be reversed.
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