STD10P10F6 Datasheet, PDF (5/15 Pages) STMicroelectronics – High avalanche ruggedness

STD10P10F6
Symbol
VSD⁽¹⁾
trr
Qrr
IRRM
Table 7: Source drain diode
Parameter
Test conditions
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, VGS = 0
ISD = 10 A,
di/dt = 100 A/µs,
VDD = 80 V
Notes:
(1)_{Pulsed: pulse duration = 300 µs, duty cycle 1.5%}
Electrical characteristics
Min. Typ. Max. Unit
-
1.1
V
-
26.5
ns
-
36.5
nC
-
2.7
A
For the P-channel Power MOSFET the actual polarity of the voltages and the
current must be reversed.
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