STB33N60M2 Datasheet, PDF (7/15 Pages) STMicroelectronics – Low gate input resistance

STB33N60M2
Electrical characteristics
Figure 8. Capacitance variations
C
(pF)
AM17911v1
10000
Ciss
1000
Figure 9. Output capacitance stored energy
Eoss
(µJ)
12
AM17912v1
10
8
100
10
1
0.1
1
Coss
Crss
10
100 VDS(V)
6
4
2
0
0 100 200 300 400 500 600 VDS(V)
Figure 10. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
1.1
ID=250µA
AM17913v1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100
TJ(°C)
Figure 11. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.3
2.1
1.9
1.7
ID=13A
VDS=10V
AM17914v1
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0 25 50 75 100 TJ(°C)
Figure 12. Normalized V_DS vs temperature
VDS
(norm)
1.09
1.07
ID=1mA
AM17915v1
1.05
1.03
1.01
0.99
0.97
0.95
0.93
0.91
-50 -25 0 25 50 75 100 TJ(°C)
Figure 13. Source-drain diode forward
characteristics
VSD (V)
AM17916v1
1.2
1.4
TJ=-50°C
1
0.8
0.6
TJ=150°C
0.4
TJ=25°C
0.2
0
0 2 4 6 8 10 12 14 16 18 20 22 24 ISD(A)
DocID025253 Rev 2
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