STB33N60M2 Datasheet, PDF (6/15 Pages) STMicroelectronics – Low gate input resistance

Electrical characteristics
STB33N60M2
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
ID
AM17906v1
(A)
Figure 3. Thermal impedance
100
10
1
OpeLriamtiiotendinbythmisaaxreRa^DSis(on)
0.1
0.1
1
10
10µs
100µs
1ms
Tj=150°C
Tc=25°C
Single pulse
10ms
100 ^VDS(V)
Figure 4. Output characteristics
ID(A)
60
VGS=7, 8, 9, 10V
AM17907v1
6V
50
40
5V
30
20
10
4V
0
0
5
10
15
20 VDS(V)
Figure 6. Gate charge vs gate-source voltage
VGS
(V)
12
VDS
10
8
6
4
VDD=480V
ID=26A
AM17909v1
VDS
(V)
500
400
300
200
2
100
0
0
0 10 20 30 40 50 Qg(nC)
Figure 5. Transfer characteristics
ID
(A)
VDS=17V
60
AM17908v1
50
40
30
20
10
0
0
2
4
6
8 10 VGS(V)
Figure 7. Static drain-source on-resistance
RDS(on)
(Ω)
0.114
VGS=10V
AM17910v1
0.112
0.110
0.108
0.106
0.104
0
5
10 15 20 25 ID(A)
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