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STB33N60M2 Datasheet, PDF (4/15 Pages) STMicroelectronics – Low gate input resistance
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Electrical characteristics
2
Electrical characteristics
STB33N60M2
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On /off states
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 600 V
drain current (VGS = 0) VDS = 600 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source
on-resistance
VGS = 10 V, ID = 13 A
Min. Typ. Max. Unit
600
V
1 µA
100 µA
±10 µA
2
3
4
V
0.108 0.125 Ω
Symbol
Parameter
Table 6. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
- 1781 - pF
-
85
- pF
-
2.5
- pF
Coss
(1)
eq.
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0
-
135
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
5.2
-
Ω
Qg
Total gate charge
VDD = 480 V, ID = 26 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 15)
-
45.5
- nC
-
9.9
- nC
-
18.5
- nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
Symbol
Parameter
td(on)
tr(v)
td(off)
tf(i)
Turn-on delay time
Voltage rise time
Turn-off-delay time
Fall time
Table 7. Switching times
Test conditions
Min.
-
VDD = 300 V, ID = 13 A,
-
RG = 4.7 Ω, VGS = 10 V
(see Figure 14 and Figure 19) -
-
Typ.
16
9.6
109
9
Max. Unit
-
ns
-
ns
-
ns
-
ns
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DocID025253 Rev 2
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