STB33N60M2 Datasheet, PDF (3/15 Pages) STMicroelectronics – Low gate input resistance

STB33N60M2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
dv/dt ⁽²⁾
dv/dt⁽³⁾
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. I_SD ≤ 26 A, di/dt ≤ 400 A/µs; V_{DS peak} < V_(BR)DSS, V_DD= 400 V.
3. V_DS ≤ 480 V
Value
± 25
26
16
104
190
15
50
- 55 to 150
Symbol
R_thj-case
R_thj-amb
R_thj-pcb
Table 3. Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-ambient pcb max
Value
0.66
62.5
30
Symbol
I_AR
E_AS
Table 4. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
(pulse width limited by T_jmax)
Single pulse avalanche energy (starting T_j=25°C,
I_D= I_AR; V_DD=50)
Value
5
2300
Unit
V
A
A
A
W
V/ns
V/ns
°C
Unit
°C/W
°C/W
°C/W
Unit
A
mJ
DocID025253 Rev 2
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