STB33N60M2 Datasheet, PDF (1/15 Pages) STMicroelectronics – Low gate input resistance

STB33N60M2
N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus™ low Q_g
Power MOSFETs in a D²PAK package
Datasheet - production data
Features
TAB
3
1
D ² PAK
Figure 1. Internal schematic diagram
, TAB
AM15572v1
Order code
STB33N60M2
V_DS @
T_Jmax
650 V
R_DS(on)
max
0.125 Ω
I_D
26 A
• Extremely low gate charge
• Lower R_DS(on) x area vs previous generation
• MDmesh™ II technology
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• LCC converters, resonant converters
Description
This device is an N-channel Power MOSFET
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q_g. This
revolutionary Power MOSFET associates a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Order code
STB33N60M2
Table 1. Device summary
Marking
Package
33N60M2
D²PAK
Packaging
Tape and reel
November 2013
This is information on a product in full production.
DocID025253 Rev 2
1/15
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