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STB33N60M2 Datasheet, PDF (5/15 Pages) STMicroelectronics – Low gate input resistance
STB33N60M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
-
26 A
ISDM (1) Source-drain current (pulsed)
-
104 A
VSD (2) Forward on voltage
ISD = 26 A, VGS = 0
-
1.6 V
trr
Reverse recovery time
- 375
ns
Qrr Reverse recovery charge
ISD = 26 A, di/dt = 100 A/µs
-
VDD = 60 V (see Figure 19)
5.6
µC
IRRM Reverse recovery current
-
30
A
trr
Reverse recovery time
ISD = 26 A, di/dt = 100 A/µs
-
478
ns
Qrr Reverse recovery charge
VDD = 60 V, Tj = 150 °C
- 7.7
µC
IRRM Reverse recovery current
(see Figure 19)
- 32.5
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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