CLP200M_03 Datasheet, PDF (15/21 Pages) STMicroelectronics – OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE

CLP200M
Fig. 33 : Relative variation of switching-off current
versus R_SENSE (between 3 and 10 Ω).
ISWOFF [Rsense] / ISWOFF [4 Ω]
1.6
1.4
1.2
1.0
0.8
0.6
Fig. 34 : Residual current l1 after the CLP200M.
The residual current l1 is defined by its peak value
(I_P) and its duration (τ) @ I_P/2 .
Current surge input
Residual current
after the CLP200M
waveform(µs)
I_PP(A)
Peak cur- waveform
rent
t(µs)
I_P (A)
5/310 positive surge 4.2
1
130A negative surge 1.1
0.5
0.4
4
6
8
10
Rsense (Ω)
R sense
-48V
R = 50 Ohms
SURGE
GENERATOR
TIPL
TIPS
I1
DUT ^GND
) _{RINGL RINGS}
Product(s _{Fig. 35 : Relative variation of switching-on voltage}
te ^{versus dV/dt with an external resistor of 4 Ω.}
le ^{VSWON / VREF}
o _1.12
bs ^1.10
O 1.08
- _1.06
t(s) ^1.04
1.02
uc ^1.00
d ^0.98
ro ^{0.1 0.3 1 3 10 30 100 300 1000}
Obsolete ^{PdV/dt (V/µs)}
Fig. 36 : Relative variation of internal reference
voltage versus junction temperature (I_LG=1mA).
VREF [Tj°C] / VREF [25°C]
1.10
1.05
1.00
0.95
0.90
0.85
-40
-20
0
20
40
60
Tj (°C)
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