CLP200M_03 Datasheet, PDF (14/21 Pages) STMicroelectronics – OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE

CLP200M
TEST CIRCUIT FOR I_SWOFF PARAMETER : GO-NO GO TEST
R
V_{BAT = - 48 V}
D.U.T.
- V_P
Surge
generator
This is a GO-NO GO test which allows to confirm the switch-off (I_SWOFF) level in a functional test circuit.
TEST PROCEDURE :
- Adjust the current level at the I_SWOFF value by short circuiting the D.U.T.
- Fire the D.U.T. with a surge current : I_PP = 10A, 10/1000µs.
) - The D.U.T. will come back to the OFF-state within a duration of 50ms max.
uct(s ^{Fig. 29 : Typical variation of switching-on current}
d ^{(positive or negative) versus R}SENSE ^{resistor and}
ro ^{junction temperature (see test condition Fig 31).}
ISWON (mA)
te ^{P 500}
-20°C 25°C 75°C
le 300
so ₂₀₀
Fig. 30 : Variation of switching-on current versus
R_SENSE at 25°C.
Iswon @ 25°C (mA)
500
Iswon min
negative
Iswon max
negative
Iswon min
positive
Iswon min
positive
300
200
- ^Ob ₁₀₀
ct(s) ³
5
7
Rsense (Ω)
9 11 13
100
3
5
7
Rsense (Ω)
9 11
rodu _{Fig. 31 : ISWON MEASUREMENT}
P _{- Iswon = I1 when the CLP200M switches on (I1 is}
te ^{progressively increased using R)}
le ^{- Both TIP and RING sides of the CLP200M are}
checked
so ^{- R}L ^{= 10 Ω.}
Ob _RL
R sense
I1
Fig. 32 : Relative variation of switching-off current
versus junction temperature for R_SENSE between 3
and 10 Ω.
ISWOFF [Tj°C] / ISWOFF [25°C]
2.0
1.8
1.6
1.4
1.2
± 48 V
TIPL TIPS
DUT ^GND
1.0
R
0.8
0.6
RINGL RINGS
0.4
-40 -20 0
20 40 60 80
Tj (°C)
14/21