CLP200M_03 Datasheet, PDF (13/21 Pages) STMicroelectronics – OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE

ABSOLUTE MAXIMUM RATINGS (R_SENSE = 4 Ω, and T_amb = 25 °C)
CLP200M
Symbol
Parameter
Test Conditions
Value
Unit
I_PP
Line to GND peak surge
10/1000µs (open circuit voltage
100
A
current
wave shape 10/1000µs)
5/310µs (open circuit voltage
wave shape 10/700µs)
150
A
I_TSM
Mains power induction
current
V_RMS = 300V, R = 600Ω
t = 200ms
0.5
A
Mains power contact current
V_RMS = 220V, R = 10Ω
(failure status threshold)
t = 200 ms
22
A
V_RMS = 220V, R = 600Ω
t = 15 mn
0.30
A
T_stg
Storage temperature range
- 40 to + 150 °C
T_j
Maximum junction temperature
150
T_L
Maximum lead temperature for soldering during 10 s
260
°C
roduct(s) ^{ELECTRICAL CHARACTERISTICS (RSENSE = 4 Ω, and Tamb = 25°C)}
P _Symbol
lete ^ILGL
bso _Vref
t(s) ^{- O VSWON}
uc ^ISWOFF
rod ISWON
Obsolete ^{P C}
Parameter
Line to GND leakage
current
Overvoltage internal refer-
ence
Line to GND voltage at SW1
or SW2 switching-on
Line to GND current at SW1
or SW2 switching-off
Line current at SW1 or SW2
switching-on
Line to GND capacitance
Test Conditions
. V_LG = 200 V
. Measured between TIP
(or RING) and GND
. I_LG = 1 mA
. Measured between TIP
(or RING) and GND
. Measured at 50 Hz between
TIPL (or RINGL) and GND
. Refer to test circuit page 14
. Positive pulse
. Negative pulse
. V_LG = -1 V + 1V_RMS
. F = 1 MHz
Value
Unit
Min. Max.
10 µA
215
V
290 V
150
mA
180 280 mA
220 320
200 pF
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