M36L0R7060U1 Datasheet, PDF (13/22 Pages) STMicroelectronics – 128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package

M36L0R7060U1, M36L0R7060L1, M36L0R7050U1, M36L0R7050L1
Signal descriptions
2.19
V_DDQF Supply Voltage
V_DDQF provides the power supply to the I/O pins and enables all Outputs to be powered
independently of V_DDF. V_DDQF can be tied to V_DDF or can use a separate supply.
2.20
V_PPF Flash memory Program Supply Voltage
V_PPF is both a control input and a power supply pin. The two functions are selected by the
voltage range applied to the pin.
If V_PPF is kept in a low voltage range (0V to V_DDQF) V_PPF is seen as a control input. In this
case a voltage lower than V_PPLK gives absolute protection against program or erase, while
V_PPF in the V_PP1 range enables these functions (see the M58LRxxxGUL datasheet for the
relevant values). V_PPF is only sampled at the beginning of a program or erase; a change in
its value after the operation has started does not have any effect and program or erase
operations continue.
If V_PPF is in the range of V_PPH it acts as a power supply pin. In this condition V_PPF must be
stable until the Program/Erase algorithm is completed.
2.21
V_SS Ground
V_SS ground is the common Flash memory and PSRAM ground. It is the reference for the
core supplies. It must be connected to the system ground.
2.22
Note:
V_SSQ Ground
V_SSQ ground is the reference for the input/output circuitry driven by V_DDQF. V_SSQ must be
connected to V_SS
Each device in a system should have V_DDF, V_DDQF and V_PP decoupled with a 0.1µF ceramic
capacitor close to the pin (high frequency, inherently low inductance capacitors should be as
close as possible to the package). See Figure 5: AC measurement load circuit. The PCB
track widths should be sufficient to carry the required V_PP program and erase currents.
13/22