MB84VD23581FJ-70 Datasheet, PDF (9/56 Pages) SPANSION – 64 M ( x 16) FLASH MEMORY & 64 M ( x 16) Mobile FCRAM

MB84VD23581FJ-70
s ELECTRICAL CHARACTERISTICS
1. DC Characteristics *^1,*^2,*³
Parameter
Symbol
Test Conditions
Input Leakage Current
Output Leakage Current
RESET Inputs Leakage
Current
Flash VCC Active Current
(Read) *⁴
Flash VCC Active Current
(Program/Erase) *⁵
Flash VCC Active Current
(Read-While-Program) *⁶
Flash VCC Active Current
(Read-While-Erase) *⁸
Flash VCC Active Current *⁸
(Erase-Suspend-Program)
WP/ACC Acceleration
Program Current
FCRAM VCC Active Current
Flash VCC Standby Current
Flash VCC Standby Current
(RESET)
Flash VCC Current
(Automatic Sleep Mode) *⁶
FCRAM VCC Standby
Current
FCRAM VCC Power Down
Current
ILI
ILO
ILIT
ICC1f
ICC2f
ICC3f
ICC4f
ICC5f
IACC
ICC1r
ISB1f
ISB2f
ISB3f
ISB1r
IPDSr
IPDNr
IPD8r
VIN = VSS to VCCf, VCCr
VOUT = VSS to VCCf, VCCr
VCCf = VCCf Max,
RESET = 12.5 V
CEf = VIL, OE = VIH
tCYCLE = 5 MHz
tCYCLE = 1 MHz
CEf = VIL, OE = VIH
CEf = VIL, OE = VIH
CEf = VIL, OE = VIH
CEf = VIL, OE = VIH
VCCf = VCCf Max,
WP/ACC = VACC Max
VCCr = VCCr Max,
CE1r = VIL, CE2r = VIH,
VIN = VIH or VIL,
IOUT = 0 mA
tRC / tWC = Min
tRC / tWC = 1 µs
VCCf = VCCf Max, CEf = VCCf ± 0.3 V,
RESET = VCCf ± 0.3 V,
WP/ACC = VCCf± 0.3 V
VCCf = VCCf Max, RESET = VSS ± 0.3 V,
WP/ACC = VCCf± 0.3 V
VCCf = VCCf Max, CEf = VSS ± 0.3 V
RESET = VCCf ± 0.3 V,
WP/ACC = VCCf± 0.3 V,
VIN = VCCf± 0.3 V or VSS ± 0.3 V
VCCr = VCCr Max,CE1r > VCCr – 0.2 V,
CE2r > VCCr– 0.2 V,
VIN < 0.2 V or VCCr – 0.2 V
VCCr = VCCr Max,
CE1r > VCCr – 0.2V,
CE2r < 0.2V
Sleep
NAP
16M
Partial
Value
Min Typ
–1.0 —
–1.0 —
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
—
1
—
1
—
—
—
—
—
—
—
—
Unit
Max
+1.0 µA
+1.0 µA
35 µA
18 mA
4 mA
35 mA
53 mA
53 mA
40 mA
20 mA
25
mA
3
5
µA
5
µA
5
µA
200 µA
10 µA
65 µA
85 µA
(Continued)
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